SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB088NS200TL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for power supply applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 200V and an average rectified forward current of 10A. Key electrical parameters include a maximum forward voltage of 0.88V at 5A and a maximum reverse current of 7uA at 200V. It withstands a forward surge current of 100A and operates within a junction temperature range up to 150°C.
Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging and quantity specifications. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements prior to integration. Ensure the selected variant matches the required thermal management capabilities for the target application environment.
Select this component when low reverse leakage is critical for preventing thermal instability in high-temperature operation. The TO-263S package provides suitable thermal dissipation for 10A continuous current applications. Compare forward voltage drops against alternative Schottky diodes to optimize overall system efficiency and heat generation profiles.
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered to address the typical reverse leakage degradation issues found in standard Schottky devices at high temperatures. It serves as a high-reliability alternative to conventional rectifiers in demanding power conversion scenarios.
Direct substitutes may include other ROHM RB088 series variants with different voltage ratings or packages, such as the RB088BM200TL. Verify pinout compatibility and thermal resistance values before substituting with components from other manufacturers.