RB088T-40HZC9

Overview

The RB088T-40HZC9 is a silicon epitaxial planar Schottky barrier diode designed for switching power supplies. It features a cathode common dual configuration within a TO-220FN package. The device supports a repetitive peak reverse voltage of 60V and an average forward rectified current of 10A per diode. Key electrical characteristics include a maximum forward voltage of 0.77V at 5A, a maximum reverse current of 3µA at 40V, and a junction-to-case thermal resistance of 2°C/W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Cathode common dual type configuration
• High reliability construction
• Super low reverse leakage current

Applications

• Switching power supply circuits

Procurement Notes

Verify the specific suffix C9 against official documentation to confirm packaging details. Ensure the component meets AEC-Q101 automotive standards if required by the application. Confirm that the TO-220FN leaded mounting style aligns with the target PCB design requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high reliability and low reverse leakage in dual-diode configurations. The TO-220FN package facilitates efficient heat dissipation through the case. Consider the 0.77V forward voltage drop for efficiency calculations and verify thermal management capabilities based on the 2°C/W junction-to-case resistance.

Part Context

This part belongs to the RB088T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is characterized by its use of silicon epitaxial planar technology. These components are engineered to provide robust performance in demanding electronic environments while maintaining low power loss during operation.

Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical ratings when considering cross-references from other manufacturers.