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The RB095B-40 is a silicon epitaxial planar Schottky barrier diode designed for general rectification. It features a common cathode dual chip configuration housed in a CPD3 power mold package. The device supports an average rectified forward current of 1.6 A per diode and withstands a repetitive peak reverse voltage of 45 V with a DC rating of 40 V. Key electrical characteristics include a maximum forward voltage of 0.55 V at 3.0 A, a maximum reverse current of 100 µA at 40 V, and a thermal impedance from junction to case of 6.0 °C/W.
Verify the component status before procurement as the datasheet explicitly marks this part as Not Recommended for New Designs. Confirm that the specific CPD3 package dimensions and taping parameters align with your manufacturing equipment requirements. Ensure all static-sensitive handling protocols are followed during storage and assembly to prevent electrostatic discharge damage.
Select this component for applications requiring a low-cost, high-reliability Schottky solution in standard electronic equipment. The dual common cathode configuration allows for efficient use of board space. Consider the 1.6 A per diode rating and 0.55 V forward voltage drop when designing for thermal management and efficiency targets within the specified operating temperature range.
This component belongs to ROHM's Schottky barrier diode series, specifically engineered for general-purpose rectification tasks. It utilizes a silicon epitaxial planar structure to ensure stable performance. The product is intended for ordinary electronic equipment such as AV, OA, and home appliances, rather than automotive or medical applications requiring extreme reliability.
Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked Not Recommended for New Designs, consult ROHM sales representatives for updated alternatives or legacy support options.