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The RB095BGE-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum average rectified forward current of 6 A and a repetitive peak reverse voltage of 45 V. The device exhibits a low forward voltage of 550 mV at 3 A and supports a forward surge current of 50 A. Operating temperatures range from -40°C to +150°C junction temperature, with a maximum reverse leakage current of 100 µA.
Verify the specific suffix TL indicates tape and reel packaging when ordering. Confirm RoHS compliance status through official documentation prior to integration. Ensure the TO-252-3 footprint matches the target PCB layout. Check for any lead-free plating anti-whisker requirements if applicable to the assembly process.
Select this component for applications requiring a 6 A continuous current rating with a 40 V reverse voltage capability. The TO-252-3 package offers a balance between thermal performance and board space. Consider the 550 mV forward voltage drop for power loss calculations. Verify that the 50 A surge current rating meets transient protection needs.
This part belongs to the RB095BGE series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for general rectification purposes with high reliability standards. The TO-252-3 package is a standard surface-mount form factor widely used in consumer and industrial electronics.
Check for direct substitutes within the RB095BGE series with different voltage ratings such as RB095BGE-40TL or RB095BGE-60TL. Verify pin compatibility and thermal characteristics before substituting with other manufacturers' TO-252-3 Schottky diodes.