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The RB095BGE-60TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average rectified forward current rating of 6 A. The device exhibits a typical forward voltage of 580 mV at 3 A and a maximum reverse leakage current of 300 uA at 90 V. It supports a non-repetitive peak forward surge current of 50 A and operates within a junction temperature range up to +150 °C.
Verify the specific suffix TL indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets as regulatory requirements may vary by region. Ensure the procurement channel provides authentic ROHM Semiconductor products to avoid counterfeit components. Check for any specific handling or storage guidelines provided in the manufacturer's documentation prior to assembly.
Select this component for applications requiring a 60 V reverse voltage rating and 6 A continuous current capability in a compact SMD form factor. The dual anode common cathode structure allows for flexible circuit topologies compared to single diodes. Consider the thermal performance and package limitations when designing heat dissipation strategies for high-current operations.
This part belongs to the RB095BGE series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings including 40 V and 90 V variants, all sharing similar current ratings and package styles. The RB095BGE-60TL specifically targets applications needing balanced performance between voltage blocking capability and low conduction losses in standard industrial electronics.
Direct substitutes include other ROHM parts within the same series such as RB095BGE-40TL or RB095BGE-90TL, depending on voltage requirements. Cross-manufacturer replacements must match the TO-252-3 package, 6 A current rating, and 60 V reverse voltage specifications while verifying pinout compatibility.