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The RB095BM-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252AA (D-Pak) surface-mount package. The device supports an average rectified forward current of 6 A and withstands a repetitive peak reverse voltage of 35 V, with a maximum working reverse voltage of 30 V. Key electrical characteristics include a maximum forward voltage of 425 mV at 3 A, a surge forward current rating of 50 A, and a maximum reverse leakage current of 0.2 mA at 30 V. It operates within a junction temperature range up to +150 °C.
Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal management aligns with the specified maximum junction temperature limits during operation.
Select this component when a low-profile surface-mount Schottky diode with high current capacity is required. The dual common cathode arrangement simplifies circuit layout for full-wave rectification. Verify that the 30 V reverse voltage rating meets the peak inverse voltage demands of the target application circuit.
This part belongs to the RB095BM series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and high reliability for general rectifier applications. The TO-252AA package provides robust thermal performance for surface-mount assembly processes.
Check for direct substitutes within the same ROHM RB095BM series or equivalent dual common cathode Schottky diodes from other manufacturers. Ensure pinout compatibility and matching electrical ratings such as forward current and reverse voltage are maintained.