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The RB095T-60 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 6 A. The device exhibits a maximum forward voltage of 580 mV at 3 A and a maximum reverse current of 300 uA at 60 V. It supports a forward surge current of 100 A and operates within a junction temperature range up to +150 °C.
Verify the specific suffix designation when sourcing replacements, as variations such as -NZ or -HZ indicate different packaging or automotive qualification statuses. Confirm RoHS compliance requirements against the specific ordering part number. Check the supply status carefully, as this component may be marked as not recommended for new designs depending on the manufacturing batch and regional distributor availability.
Select this component for applications requiring a through-hole mounted Schottky diode with a 60 V rating and 6 A continuous current capacity. The TO-220FN-3 package provides robust thermal performance compared to surface-mount alternatives. Ensure the circuit design accounts for the 100 A surge current capability during startup or fault conditions. Compare specifications against surface-mount equivalents like the RB095BGE series if board space constraints exist.
This component belongs to the RB095T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage drop and fast switching speeds. The RB095T-60 specifically utilizes a leaded TO-220FN-3 package, distinguishing it from the surface-mount RB095BGE variants. It serves as a legacy option for designs prioritizing through-hole assembly methods.
Public confirmed substitute part numbers include RB095T-60NZ and RB095T-60HZ.