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The RB098BGE-40TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a 40V reverse voltage rating and 6A average forward current capability. Key electrical parameters include a maximum forward voltage of 770mV at 3A, a peak forward surge current of 50A, and a maximum reverse leakage current of 1.5µA at 40V. The device supports a junction temperature up to 150°C and is supplied in tape and reel packaging.
Verify the specific suffix TL indicates tape and reel packaging when ordering. Confirm RoHS compliance status through official datasheets as requirements may vary by region. Ensure the TO-252-3 footprint matches the target PCB design. Check for any regional REACH SVHC declarations prior to final procurement decisions.
Select this component for applications requiring low forward voltage drop and minimal reverse leakage at 40V ratings. The TO-252 package offers adequate thermal performance for 6A continuous currents. Consider the common cathode topology if bidirectional or split-rail rectification is needed within a single package constraint.
This part belongs to the RB098BGE series of ultra-low IR Schottky barrier diodes from ROHM. It is designed as a standard-grade component suitable for general industrial electronics. The series emphasizes high reliability and low power loss in switching applications, distinguishing it from higher voltage variants like the 150V models.
The RB098BM-40FNS is listed as a recommended replacement with identical pinout and package specifications. Verify that the alternative maintains the same thermal and electrical ratings for direct substitution.