RB098BM-30FHHTL

RB098BM-30FHHTL

$1.66
  • Description:DIODE ARRAY SCHOTT 30V 3A TO-252
  • Series:-

SKU:c99c98fa2e6a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOTT 30V 3A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):3A
  • Voltage - Forward (Vf) (Max) @ If:720 mV @ 3 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1.5 µA @ 30 V
  • Operating Temperature - Junction:175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:Automotive
  • Qualification:AEC-Q101

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RB098BM-30FHHTL

Overview

The RB098BM-30FHH is a silicon epitaxial planar Schottky barrier diode featuring a cathode common dual configuration. It is AEC-Q101 qualified for automotive reliability and housed in a TO-252 (D-Pak) package. Key electrical parameters include a maximum repetitive peak reverse voltage of 35V, a reverse voltage rating of 30V, and an average rectified forward current of 6A per diode at a case temperature of 164°C. The device supports a peak forward surge current of 50A per diode. Electrical characteristics specify a maximum forward voltage of 0.72V at 3A and a maximum reverse current of 1.5μA at 30V. Thermal resistance from junction to case is 4.0°C/W per diode.

Feature Summary

  • Cathode common dual type structure
  • Ultra low reverse current specification
  • High reliability power mold construction
  • AEC-Q101 qualified for automotive applications

Applications

  • Switching power supplies

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and availability status. Confirm that the component meets all required automotive qualification standards before integration into final designs. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring high-reliability dual Schottky configurations with ultra-low leakage currents. The TO-252 package provides efficient heat dissipation suitable for surface-mount assembly. Verify that the 30V reverse voltage rating aligns with the circuit's maximum operating voltage requirements and surge conditions.

Part Context

This component belongs to the RB098BM series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series utilizes silicon epitaxial planar technology to achieve high reliability and low forward voltage characteristics. The product is designed specifically for robust performance in demanding environments, including automotive electronics where AEC-Q101 compliance is mandatory.

Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers within the same series or equivalent specifications. Do not assume cross-compatibility with other manufacturers' components without verifying absolute maximum ratings and thermal characteristics.

FAQ

What is the maximum junction temperature for the RB098BM-30FHH?

The maximum junction temperature is 175°C.

Is the RB098BM-30FHH qualified for automotive applications?

Yes, the component is AEC-Q101 qualified.

What is the thermal resistance from junction to ambient?

The thermal resistance from junction to ambient is 75°C/W when mounted on a 50 x 50 x 1.6mm FR4 board with single-sided copper.

RB098BM-30FHHTLRB098BM-30FHHTL
$1.66
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