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The RB098BM-40FNSTL is a silicon epitaxial planar Schottky barrier diode in a TO-252 package. It features a cathode common dual configuration with a reverse voltage of 40V and an average rectified forward current of 6A per diode. The device supports a peak forward surge current of 50A and operates at junction temperatures up to 175°C. Key electrical characteristics include a maximum forward voltage of 0.77V at 3A and an ultra-low reverse current of 1.5μA at 40V.
Verify the specific ordering part number RB098BM-40FNSTL against the official ROHM datasheet to ensure correct packaging and marking details. Confirm that the component meets the required thermal resistance specifications for the intended application environment. Ensure proper handling precautions are followed due to electrostatic sensitivity.
Select this component for applications requiring a dual Schottky diode with high temperature stability. The TO-252 package provides efficient heat dissipation suitable for surface mount designs. Consider the 175°C junction temperature rating for high-temperature environments. Verify compatibility with switching power supply circuits requiring low forward voltage drop.
This component belongs to the RB098BM series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for general electronic equipment including AV, OA, and home appliances. The RB098BM-40FNS variant specifically targets switching power supply applications with its low reverse current characteristics.
RB098BGE-40
The maximum junction temperature is 175°C.
No, this product is not recommended for use in automotive equipment.
The maximum reverse current is 1.5μA when measured at 40V.