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The RB098BM100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 6 A. The device exhibits a low forward voltage drop of 770 mV at 3 A and minimal reverse leakage current of 3 µA. Designed for automotive applications, it holds AEC-Q101 qualification and supports junction temperatures up to +150°C.
Verify the specific suffix 'FHTL' against official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest declaration. Check for any superseding part numbers or lifecycle notices such as NRND before finalizing procurement plans.
Select this component when a dual Schottky arrangement in a DPAK package is required for automotive environments. Ensure the 110 V reverse voltage rating exceeds the peak inverse voltage in the target application. Verify that the 6 A current capacity meets load requirements while accounting for thermal derating at high ambient temperatures.
This component belongs to ROHM's RB098BM series of ultra-low reverse current Schottky barrier diodes. The series is engineered specifically for automotive electronics requiring high reliability and low power loss. The TO-252-3 package provides robust thermal performance suitable for surface-mount assembly processes.
The RB098BM100FH is listed as a similar level part with the same pinout and package but may differ in packaging format. Verify electrical parameters and automotive qualification status before substitution.