RB098BM100FNSTL

Overview

The RB098BM100FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (DPAK) surface-mount package. The device supports a repetitive peak reverse voltage of 110 V and a standard reverse voltage of 100 V. It provides an average rectified forward current of 6 A per diode under specified thermal conditions, with a peak forward surge current capability of 100 A. The component exhibits a maximum forward voltage of 0.77 V at 3 A and an ultra-low reverse current of 3 μA at 100 V. It operates within a junction temperature range up to 175 °C.

Feature Summary

• High reliability power mold type construction
• Ultra-low reverse leakage current characteristics
• Cathode common dual configuration for efficient circuit design

Applications

• Switching power supplies

Procurement Notes

Verify the specific ordering suffix TL against the latest official datasheet to confirm packaging details such as embossed tape width and reel size. Ensure that the procurement documentation matches the exact part number RB098BM100FNSTL to avoid confusion with similar variants like the FHTL or FNS versions. Confirm RoHS compliance status through the manufacturer's current product release notes before finalizing orders.

Selection Notes

Select this component for applications requiring high thermal stability and low forward voltage drop in compact surface-mount designs. The TO-252 package facilitates effective heat dissipation, supporting operation up to 175 °C junction temperature. Consider the cathode common dual structure when designing circuits that benefit from shared reference points or simplified layout requirements in power conversion systems.

Part Context

This component belongs to the RB098BM series of Schottky barrier diodes designed for general-purpose switching applications. It utilizes silicon epitaxial planar technology to ensure consistent performance and reliability. The series is characterized by its robust construction suitable for industrial and consumer electronics environments where space constraints and thermal management are critical design factors.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify electrical parameters such as reverse voltage and forward current ratings when substituting with other models to ensure system compatibility and safety margins are maintained.

FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175 °C.

How is the internal circuit configured?

The device features a cathode common dual configuration.

What is the typical reverse current specification?

The maximum reverse current is 3 μA when measured at a reverse voltage of 100 V.