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Product Detailed Parameters
- Description：DIODE ARRAY SCHOT 150V 3A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：7 µA @ 150 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RB098BM150FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252M (D-PAK) surface-mount package. The device supports a repetitive peak reverse voltage of 150 V and an average rectified forward current of 6 A per diode. It exhibits ultra-low reverse current and a maximum forward voltage of 0.83 V at 3 A. The component operates within a junction temperature range up to 175 °C and is supplied in embossed tape reels.
Feature Summary
- High reliability power mold type construction
- Ultra-low reverse current characteristics
- Cathode common dual internal circuit configuration
Applications
- Switching power supplies
Procurement Notes
Verify the specific ordering suffix TL against official documentation to confirm taping specifications and reel dimensions. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status for the exact batch. Validate that the procurement channel provides genuine ROHM products to avoid counterfeit components affecting system reliability.
Selection Notes
Select this component for applications requiring high-speed switching with low reverse leakage. The TO-252 package offers efficient thermal dissipation for moderate current loads. Consider the 175 °C junction temperature rating for high-temperature environments. Verify that the 150 V reverse voltage rating exceeds the maximum circuit operating voltage with appropriate safety margins.
Part Context
This part belongs to the RB098BM series of Schottky barrier diodes designed for general-purpose switching applications. The series utilizes silicon epitaxial planar technology to ensure stable performance. The RB098BM150 variant specifically targets circuits requiring 150 V blocking capability. It serves as a discrete semiconductor solution for modern electronic equipment.
Replacement Considerations
RB098BGE150TL
FAQ
What is the maximum junction temperature for the RB098BM150FNSTL?
The maximum junction temperature is 175 °C.
How is the RB098BM150FNSTL packaged?
It is packaged in a TO-252M (D-PAK) surface-mount case and supplied in embossed tape reels.
What is the typical reverse current specification?
The maximum reverse current is 7 μA when measured at a reverse voltage of 150 V.
