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Product Detailed Parameters
- Description：DIODE ARRAY SCHOT 150V 6A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：6A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：7 µA @ 150 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RB098BM150TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252M (D-PAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 6 A. Key electrical parameters include a maximum forward voltage of 0.83 V at 3 A, a peak forward surge current of 100 A, and a maximum reverse current of 7 uA at 150 V. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Ultra-low reverse leakage current characteristics
- High reliability power mold type construction
- Surface mount installation style
Applications
- Switching power supplies
- DC-DC converters
- General purpose rectification
Procurement Notes
Verify the specific ordering suffix to confirm the tape and reel packaging quantity of 2500 units. Confirm RoHS compliance status with the supplier. Check the supply status as this part may be designated as Not Recommended for New Designs depending on the specific manufacturing batch or regional availability. Ensure the TO-252M package dimensions match your PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component when a 150 V rating and 6 A continuous current capacity are required in a compact surface-mount form factor. The low forward voltage drop contributes to reduced power loss compared to standard rectifiers. Consider the thermal management capabilities of the D-PAK package for high-current applications. Verify that the 150 °C maximum junction temperature meets the environmental operating conditions of the target system.
Part Context
This component belongs to the RB098 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by ultra-low reverse current and fast switching speeds. The RB098BM150TL specifically utilizes the TO-252M package variant, which shares pinout compatibility with other devices in the family but may differ in physical thickness or specific material properties compared to older revisions like the TO-252GE.
Replacement Considerations
The RB098BGE150TL is a recommended replacement with identical pinout and package specifications. The RB098BM150FNSTL is also listed as a similar level alternative with the same electrical characteristics. Verify that any substitute maintains the 150 V reverse voltage and 6 A current ratings.
