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Product Detailed Parameters
- Description：DIODE ARR SCHOT 60V 7.5A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk,Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：7.5A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 7.5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：600 µA @ 60 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FN
- Grade：-
- Qualification：-
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Overview
The RB205T-60 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a common cathode configuration housed in a TO-220FN (3-pin) leaded package. The device is rated for a maximum repetitive reverse voltage of 60V and an average rectified forward current of 15A. Key electrical characteristics include a maximum forward voltage of 0.55V at 7.5A and a maximum reverse current of 0.3mA at 40V. The component supports a junction temperature up to 150°C and operates within a storage temperature range of -40°C to 150°C.
Feature Summary
- Common cathode dual configuration suitable for bridge rectifier applications
- Low reverse current design ensuring high reliability
- Lead-type mounting style for through-hole integration
Applications
- General purpose rectification in power supplies
- Free-wheeling diodes in switching circuits
- DC-DC converter output rectification
Procurement Notes
Verify the specific suffix code, as the provided model number may correspond to variants such as RB205T-60NZC9. Confirm RoHS compliance status and check if the part is designated as non-recommended for new designs. Ensure the package type matches the required thermal and mechanical constraints for the target assembly process.
Selection Notes
Select this component when a 15A current rating with a 60V blocking capability is required in a through-hole package. Compare the low reverse leakage current against standard silicon diodes to evaluate efficiency gains. Consider the thermal resistance of the TO-220FN package for heat dissipation requirements in the final enclosure design.
Part Context
This device belongs to ROHM's RB series of Schottky barrier diodes, which are engineered for low forward voltage drop and fast switching speeds. The RB205T variant specifically utilizes a common cathode structure, allowing it to function effectively in full-wave rectification topologies without requiring external bridging components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the verified source material. Engineers should consult official cross-reference guides or contact the manufacturer directly for validated alternatives that match the electrical and mechanical specifications.
