RB215T-40HZC9

Overview

The RB215T-40HZC9 is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-220FN (3PIN) leaded package. The device is qualified under the AEC-Q101 automotive standard, ensuring high reliability for demanding environments. Key electrical specifications include a maximum repetitive peak reverse voltage of 45V and a DC reverse voltage rating of 40V. It supports an average rectified forward current of 20A per element under specific thermal conditions, with a peak surge forward current capacity of 100A. The component operates within a junction temperature range up to 150°C and offers low reverse leakage current characteristics.

Feature Summary

• Features a cathode common dual type configuration suitable for efficient circuit integration.
• Designed with low reverse leakage current properties to enhance performance efficiency.
• Manufactured using silicon epitaxial planar construction for robust structural integrity.
• Certified to AEC-Q101 standards, providing high reliability for automotive applications.

Applications

• Switching power supply circuits
• Automotive electronic systems requiring AEC-Q101 compliance
• High-reliability rectification applications

Procurement Notes

Verify that the procurement channel provides official documentation confirming the AEC-Q101 qualification status. Ensure the ordering suffix matches the required packaging format. Confirm that the component meets the specific thermal management requirements for the intended application environment before finalizing orders.

Selection Notes

Select this component when a dual Schottky diode with a shared cathode is required for switching power supplies. Consider the TO-220FN package for through-hole mounting needs. Evaluate the 20A average current rating against the system's thermal dissipation capabilities. Verify compatibility with automotive grade reliability standards if used in vehicle electronics.

Part Context

This part belongs to the RB215T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use in high-efficiency rectification tasks. The specific model variant includes designations for automotive qualification and specific packaging configurations, distinguishing it from standard industrial grades.

Replacement Considerations

Consult official ROHM documentation for direct substitutes. Verify pinout compatibility and electrical ratings such as reverse voltage and forward current. Ensure any replacement maintains the same AEC-Q101 qualification level if automotive reliability is required.

FAQ

What is the maximum repetitive peak reverse voltage for this component?

The maximum repetitive peak reverse voltage (VRM) is 45V.

Is this component suitable for automotive applications?

Yes, the RB215T-40HZC9 is qualified according to the AEC-Q101 standard for automotive grade components.

What is the thermal impedance from junction to case?

The thermal impedance (θjc) from junction to case is 1.75 °C/W.