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The RB215T-60HZC9 is a Schottky barrier diode designed for switching power supplies. It features a cathode common configuration in a TO-220FN package. Key electrical parameters include a maximum repetitive reverse voltage of 60V and an average rectified forward current of 20A. The device exhibits a maximum forward voltage of 0.58V at 10A and a maximum reverse current of 600μA at 60V. It operates within a junction temperature range up to 150°C and complies with the AEC-Q101 automotive standard.
Verify the specific ordering suffix against official documentation to confirm exact specifications, as suffixes may indicate variations in packaging or testing criteria. Confirm that the component meets all required environmental and performance standards for your intended application before procurement.
Select this component for applications requiring a robust Schottky diode with low forward voltage drop and high surge current capability. Ensure the operating conditions remain within the specified thermal and electrical limits to maintain reliability and performance over the product's lifespan.
This component belongs to the RB215T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is characterized by its silicon epitaxial planar construction and is designed for high-reliability applications in power electronics.
Consult official ROHM documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' components without thorough technical validation.
The maximum repetitive reverse voltage (VRM) is 60V.
The average rectified forward current (Io) is rated at 20A.
Yes, the component is AEC-Q101 qualified.