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The RB218BM200FHH is a silicon epitaxial planar Schottky barrier diode with AEC-Q101 qualification. It features a cathode common dual configuration in a TO-252 package. Key electrical ratings include a repetitive peak reverse voltage of 200 V and an average rectified forward current of 20 A per diode. The maximum forward voltage is 0.88 V at 10 A, while the reverse current is limited to 10 μA at 200 V. The device supports a junction temperature up to 175 °C and offers a thermal resistance (junction-to-case) of 1.2 °C/W.
Verify the specific ordering suffix against the manufacturer's latest documentation before procurement. Confirm that the component meets all required automotive grade standards and environmental specifications for the intended application environment. Ensure proper handling procedures are followed due to electrostatic sensitivity.
Select this component for applications requiring high junction temperatures and low reverse leakage. Verify thermal management requirements to prevent thermal runaway. Ensure the selected package size fits the PCB footprint constraints. Check compatibility with standard surface mount assembly processes.
This part belongs to ROHM's automotive-grade Schottky barrier diode series designed for high-reliability applications. It utilizes a silicon epitaxial planar structure to achieve superior performance under demanding conditions. The product is specifically engineered to meet the rigorous standards of the automotive industry.
Consult official substitution lists for verified alternatives. Ensure any replacement matches the electrical ratings, package dimensions, and thermal characteristics. Verify that substitute components also hold necessary automotive qualifications if required by the application.
The maximum junction temperature is 175 °C.
Yes, the RB218BM200FHH is AEC-Q101 qualified.
The maximum reverse current is 10 μA when measured at 200 V.