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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 200V 10A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 200 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RB218BM200FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration in a TO-252 (D-Pak) surface-mount package. The device supports a repetitive peak reverse voltage of 200 V and an average rectified forward current of 20 A per diode. Key electrical parameters include a maximum forward voltage of 0.88 V at 10 A, a maximum reverse current of 10 μA at 200 V, and a peak forward surge current of 100 A. The component operates within a junction temperature range up to 175 °C.
Feature Summary
- Ultra-low reverse leakage current characteristics for improved efficiency
- High reliability power mold type construction
- Cathode common dual configuration design
Applications
- Switching power supplies
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and marking requirements. Confirm that the intended application environment remains within the specified thermal limits to prevent thermal runaway. Ensure proper handling precautions are taken due to electrostatic sensitivity during storage and mounting processes.
Selection Notes
Select this component for applications requiring high current handling with low forward voltage drop in a compact surface-mount form factor. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the ultra-low reverse current benefit for high-efficiency power conversion circuits where leakage losses must be minimized.
Part Context
This part belongs to the RB218BM series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of blocking metal technology to maintain performance under elevated temperatures. The RB218BM200FNSTL specifically utilizes the TL taping code for embossed tape reel packaging, facilitating automated assembly in manufacturing environments.
Replacement Considerations
RB218BM200FNS
FAQ
What is the maximum junction temperature for this component?
The maximum junction temperature is 175 °C.
How is the internal circuit configured?
The internal circuit is configured as a cathode common dual type.
What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 1.2 °C/W per diode.
