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The RB218NS-30TL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications including automotive and industrial power supplies. It features a dual anode common cathode configuration within a TO-263S (D2PAK) surface-mount package. The device supports an average rectified forward current of 20 A and withstands a repetitive reverse voltage of 35 V with a rated reverse voltage of 30 V. Key electrical characteristics include a maximum forward voltage of 0.72 V at 10 A and a low reverse leakage current of 5 µA at 30 V. It is qualified under the AEC-Q101 standard and operates at junction temperatures up to +150°C.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm AEC-Q101 qualification status if automotive deployment is required. Ensure the ordering part number matches the exact voltage rating and current capacity needed for the target circuit design before procurement.
Select this component when a dual-diode solution is required for synchronous rectification or full-wave conversion in compact designs. The TO-263S package provides robust thermal performance suitable for high-current applications. Consider the low leakage current specification for systems operating in elevated ambient temperatures where standard Schottky diodes might experience thermal instability.
This component belongs to the RB218NS series of super low IR Schottky barrier diodes. The series utilizes a blocking metal structure to significantly improve reverse leakage current characteristics compared to conventional devices. This technology allows for higher voltage ratings while maintaining stability in harsh thermal conditions typical of modern power electronics.
The RB218NS-30FH is a confirmed substitute with identical pinout and package specifications. Verify that any replacement maintains the same AEC-Q101 qualification level and electrical parameters to ensure compatibility with existing automotive and industrial designs.