RB218NS-60TL

Overview

The RB218NS-60TL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-efficiency rectification in switching power supplies. It features a dual anode common cathode configuration within a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 60 V and an average forward current rating of 40 A. The device exhibits a low forward voltage of 860 mV at 10 A and a minimal reverse leakage current of 12 uA. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.

Feature Summary

• Dual anode common cathode configuration for efficient bridge rectification or synchronous rectification applications
• Super low reverse leakage current characteristic to minimize standby power loss
• High thermal stability with a maximum operating junction temperature of +150 C
• Surface-mount TO-263S package optimized for automated assembly and heat dissipation

Applications

• AC/DC converter output rectification
• DC/DC converter freewheeling diodes
• Power supply unit main rectification stages
• Battery charging circuit protection

Procurement Notes

Verify the specific suffix TL against the manufacturer's datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component matches the required RoHS compliance status for your target market regulations. Cross-reference the part number with official ROHM distributors to confirm current production status and avoid obsolete variants. Check for any automotive qualification markings if the application requires AEC-Q101 certification, as standard industrial versions may differ from qualified grades.

Selection Notes

Select this component when a 60 V blocking voltage and 40 A continuous current capacity are required in a compact surface-mount form factor. The low forward voltage drop makes it suitable for low-voltage, high-current output stages where efficiency is critical. Consider the thermal resistance of the TO-263S package and ensure adequate PCB copper area for heat sinking. Compare reverse leakage characteristics against similar parts if ultra-low quiescent current is a primary design constraint.

Part Context

This device belongs to the RB218NS series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its silicon construction and dual-anode common-cathode topology. These components are engineered for use in general-purpose power supplies and industrial equipment requiring reliable rectification with reduced conduction losses. The TO-263S package provides a balance between current handling capability and board space efficiency.

Replacement Considerations

Direct substitutes must match the 60 V reverse voltage, 40 A forward current, and dual common cathode configuration. Verify that alternative packages maintain compatible pinouts and thermal performance. Check for equivalent forward voltage and reverse leakage specifications to ensure circuit efficiency remains unchanged.