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The RB218NS100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 20 A. The device exhibits a typical forward voltage of 870 mV at 10 A and supports a surge current of 100 A. Designed for high-temperature operation up to +150 °C, it meets the AEC-Q101 automotive qualification standard.
Verify the specific suffix FHTL against the official datasheet to confirm packaging details and tape-and-reel specifications. Ensure the procurement source provides valid traceability documentation. Confirm that the component matches the exact RoHS compliance status required for your assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit risks.
Select this component when a dual Schottky configuration in a D2PAK package is required for high-current applications. The 110 V rating suits low-voltage DC-DC converters. Consider the thermal performance of the TO-263S package for heat dissipation needs. Verify that the 20 A current rating aligns with the peak load requirements of the target circuit design.
This part belongs to ROHM's RB series of Schottky barrier diodes, which are engineered for low forward voltage and high reliability. The RB218NS variant specifically targets automotive and industrial markets where robustness and compact surface-mount integration are critical. It complements other devices in the family offering similar configurations with varying voltage ratings.
Check for direct substitutes within the RB218NS series with different voltage ratings if system requirements change. Verify pinout compatibility before replacing with other manufacturers' D2PAK dual Schottky diodes. Ensure any alternative meets the same AEC-Q101 qualification standards for automotive use.