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The RB218NS200FHTL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications with AEC-Q101 qualification. It features a dual anode common cathode configuration in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 200 V and an average rectified forward current of 20 A. The device exhibits a low forward voltage of 0.88 V at 10 A and a maximum reverse current of 10 µA at 200 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix FHTL to confirm the tape-and-reel packaging format and quantity. Confirm AEC-Q101 automotive grade status if required for your design. Check current lifecycle status as older variants may be obsolete. Ensure the TO-263S footprint matches your PCB layout requirements before ordering.
Select this component when a 200 V rating and 20 A continuous current are needed in a D2PAK package. The low reverse leakage current makes it suitable for high-temperature automotive applications where thermal stability is critical. Compare forward voltage specifications against alternative Schottky diodes to ensure optimal efficiency for the target power supply design.
This part belongs to the RB218 series of Schottky barrier diodes from ROHM. The series is characterized by its use of blocking metal technology to improve reverse leakage current performance at elevated temperatures. This allows the diodes to operate safely in automotive and industrial environments without the risk of thermal runaway often associated with standard Schottky devices.
The RB218BM200FHTL is listed as a similar level replacement with the same pinout and package but in a TO-252M form factor. Verify that the physical dimensions and thermal characteristics of the TO-252 package are compatible with the existing design constraints.