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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 40V 10A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：770 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 40 V
- Operating Temperature - Junction：150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FN
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB218T-40HZC9 is a silicon epitaxial planar Schottky barrier diode array featuring a cathode common dual configuration. It operates with a repetitive peak reverse voltage of 45V and a standard reverse voltage of 40V. The device supports an average forward rectified current of 20A, distributed as 10A per diode at a case temperature of 115°C. Key electrical characteristics include a maximum forward voltage of 0.77V at 10A and a maximum reverse current of 5µA at 40V. It withstands a non-repetitive surge current of 100A and maintains a junction-to-case thermal resistance of 2°C/W.
Feature Summary
- Features a cathode common dual structure for efficient circuit integration.
- Engineered for high reliability in demanding automotive environments.
- Provides super low reverse leakage current to minimize power loss.
Applications
- Switching power supplies
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix C9 against official documentation to confirm package and tape specifications. Confirm AEC-Q101 qualification status directly with the manufacturer or authorized distributor before finalizing procurement plans. Ensure storage conditions strictly adhere to humidity and temperature limits to maintain solderability and prevent electrostatic discharge damage during handling.
Selection Notes
Select this component when designing circuits requiring a robust dual Schottky configuration with low forward voltage drop. Evaluate the thermal management requirements based on the specified junction-to-case resistance. Ensure the operating ambient temperature allows for proper derating of the average forward current to stay within the maximum junction temperature limit of 150°C.
Part Context
This part belongs to the RB218T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed to meet automotive grade standards, specifically AEC-Q101 qualification. It utilizes a TO-220FN package to provide effective heat dissipation for high-current applications while maintaining a compact footprint suitable for industrial and automotive PCB layouts.
Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, voltage ratings, and thermal characteristics.
FAQ
What is the construction type of the RB218T-40HZ?
The device utilizes a silicon epitaxial planar construction.
How is the forward current rated for this dual diode?
The total average forward rectified current is 20A, which is distributed as 10A per diode when the case temperature is maintained at 115°C.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
