RB218T100HZC9

RB218T100HZC9

$2.41
  • Description:DIODE ARR SCHOT 100V 10A TO220FN
  • Series:-

SKU:a803927ea9b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARR SCHOT 100V 10A TO220FN
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:870 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:7 µA @ 100 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Grade:Automotive
  • Qualification:AEC-Q101

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RB218T100HZC9

Overview

The RB218T100HZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports a repetitive reverse voltage of 150 V and an average forward current of 20 A. Key electrical parameters include a maximum forward voltage of 0.88 V at 10 A, a surge forward current capability of 100 A, and a maximum reverse current of 20 µA at 150 V. It operates up to a junction temperature of +150 °C and holds AEC-Q101 automotive qualification.

Feature Summary

  • Dual anode common cathode configuration for flexible circuit integration
  • AEC-Q101 qualified for automotive grade reliability
  • Super low reverse current characteristics to prevent thermal runaway
  • High reliability construction suitable for high-temperature environments

Applications

  • Automotive power supply circuits
  • Industrial equipment rectification
  • Switching power supplies requiring high efficiency

Procurement Notes

Verify the specific suffix 'C9' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component meets the required AEC-Q101 standards for your specific application environment. Cross-reference the TO-220FN-3 package dimensions with your PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual Schottky diode with common cathode topology is required in a through-hole package. It is suitable for replacing standard fast recovery diodes in applications demanding lower forward voltage drop and improved efficiency. Consider the 150 V rating and 20 A current capacity to ensure adequate headroom for your specific circuit design constraints.

Part Context

This part belongs to the RB218 series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered to address thermal instability issues found in conventional Schottky diodes by utilizing a blocking metal structure that suppresses reverse current leakage at elevated temperatures. This makes the series particularly effective for use in automotive and industrial power electronics where heat dissipation is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching the TO-220FN-3 package, pinout configuration, and electrical ratings such as 150 V reverse voltage and 20 A forward current.

RB218T100HZC9RB218T100HZC9
$2.41
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