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The RB218T100HZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports a repetitive reverse voltage of 150 V and an average forward current of 20 A. Key electrical parameters include a maximum forward voltage of 0.88 V at 10 A, a surge forward current capability of 100 A, and a maximum reverse current of 20 µA at 150 V. It operates up to a junction temperature of +150 °C and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'C9' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component meets the required AEC-Q101 standards for your specific application environment. Cross-reference the TO-220FN-3 package dimensions with your PCB layout requirements before finalizing procurement decisions.
Select this component when a dual Schottky diode with common cathode topology is required in a through-hole package. It is suitable for replacing standard fast recovery diodes in applications demanding lower forward voltage drop and improved efficiency. Consider the 150 V rating and 20 A current capacity to ensure adequate headroom for your specific circuit design constraints.
This part belongs to the RB218 series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered to address thermal instability issues found in conventional Schottky diodes by utilizing a blocking metal structure that suppresses reverse current leakage at elevated temperatures. This makes the series particularly effective for use in automotive and industrial power electronics where heat dissipation is critical.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching the TO-220FN-3 package, pinout configuration, and electrical ratings such as 150 V reverse voltage and 20 A forward current.