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The RB218T100NZC9 is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a cathode-common dual configuration housed in a TO-220FN (3-pin) leaded package. The device supports an average rectified forward current of 20 A and a repetitive reverse voltage of 100 V. Key electrical characteristics include a maximum forward voltage of 0.87 V at 10 A and a maximum reverse current of 7 mA at 100 V. It operates with a junction temperature up to +150 °C and complies with RoHS standards.
Verify the complete part number including the suffix C9 to ensure correct packaging and specification alignment. Confirm that the component status is appropriate for the intended design phase, as this specific variant may be designated for existing customers rather than new designs. Cross-reference the datasheet for thermal management requirements given the leaded package type.
Select this component when a through-hole Schottky diode with a 100 V rating and 20 A current capacity is required. The TO-220FN package offers superior heat dissipation compared to surface-mount alternatives. Ensure the application benefits from the low reverse current特性 to minimize standby power loss and improve overall system efficiency under high-temperature conditions.
This component belongs to the RB218 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of blocking metal technology to maintain low reverse leakage current even at elevated temperatures. This makes the family suitable for demanding environments where thermal stability is critical for preventing thermal runaway.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements by matching the TO-220FN package dimensions, pinout configuration, and electrical ratings such as VRM, IO, and VF specifications.