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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 60V 15A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：15A
- Voltage - Forward (Vf) (Max) @ If：630 mV @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：600 µA @ 60 V
- Operating Temperature - Junction：150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FN
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB225T-60HZC9 is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device is qualified under the AEC-Q101 automotive standard. Key electrical parameters include a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 30 A per diode at a case temperature of 108°C. The typical forward voltage is 630 mV at 15 A, with a maximum reverse leakage current of 600 μA at 60 V. The component supports a peak surge forward current of 100 A and operates within a junction temperature range up to 150°C.
Feature Summary
- Features a cathode common dual anode configuration for efficient circuit design.
- Engineered with low reverse leakage current characteristics to minimize power loss.
- Constructed using silicon epitaxial planar technology for high reliability.
Applications
- Switching power supply circuits
- Automotive electronic systems requiring AEC-Q101 compliance
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and variant alignment. Confirm that the intended application environment remains within the specified thermal and electrical limits defined in the official datasheet. Cross-reference the component marking with the approved part identification to prevent counterfeit substitution during acquisition.
Selection Notes
Select this component when a robust, leaded Schottky diode with high current handling is required for automotive or industrial switching applications. The TO-220FN-3 package facilitates effective heat dissipation for high-power scenarios. Ensure the system voltage does not exceed the 60 V rating and that thermal management strategies accommodate the specified junction temperature constraints.
Part Context
This component belongs to the RB225T series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for high-reliability applications, particularly within the automotive sector where AEC-Q101 qualification is mandatory. The RB225T-60HZC9 represents a specific voltage and current rating variant within this broader product family.
Replacement Considerations
Consult the official ROHM replacement guide for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic specifications without verifying electrical parameters against the original datasheet.
FAQ
What is the thermal impedance from junction to case?
The thermal impedance (θjc) from junction to case is 1.75 °C/W.
Is this component suitable for automotive applications?
Yes, the RB225T-60HZC9 is qualified according to the AEC-Q101 standard for automotive use.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
