SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB225T-60NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in TO-220FN-3 packages. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and a forward current rating of 30 A. The device exhibits a typical forward voltage of 630 mV at rated current and supports a forward surge current of 100 A. With a maximum operating temperature of +150 °C and low reverse leakage current of 600 uA, it meets AEC-Q101 automotive qualification standards.
Verify the specific suffix 'C9' against the official datasheet to confirm package and tape/reel specifications, as ordering suffixes may alter physical dimensions or packaging type without changing electrical function. Ensure the component source is authorized to guarantee authenticity and traceability for automotive-grade parts.
Select this component when a high-current Schottky rectifier with a common cathode topology is required for automotive environments. The TO-220FN-3 package provides robust heat dissipation for 30 A continuous operation. Compare forward voltage characteristics against system efficiency requirements and ensure the 60 V reverse voltage rating exceeds peak circuit voltages.
This part belongs to ROHM's RB225T series of Schottky barrier diodes, which are optimized for high-efficiency rectification in power electronics. The series is characterized by low forward voltage drop and fast switching speeds, making it suitable for modern switching power supplies and automotive systems where energy loss and heat generation must be minimized.
The RB225T-60HZ is listed as an alias for this component family. Verify pinout compatibility and thermal resistance values before substitution. No other direct cross-references are confirmed in public documentation.