RB225T100

Overview

The RB225T100 is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-220FN-3 package for through-hole mounting. The device supports a repetitive peak reverse voltage of 110 V and a DC reverse voltage of 110 V. It provides an average rectified forward current of 30 A per diode under specific thermal conditions, with a peak forward surge current capability of 100 A. Key electrical characteristics include a maximum forward voltage of 860 mV at 15 A and a maximum reverse current of 400 μA at 100 V. The component operates within a junction temperature range up to 150°C and offers a thermal impedance from junction to case of 1.75°C/W.

Feature Summary

• Cathode common type structure utilizing the TO-220 package format.
• Low reverse leakage current (IR) design for improved efficiency.
• High reliability construction based on silicon epitaxial planar technology.

Applications

• Switching power supply circuits

Procurement Notes

Verify the current lifecycle status before procurement, as this component may be designated as Not Recommended for New Designs (NRND). Confirm that the TO-220FN-3 package dimensions and pinout align with your PCB footprint requirements. Ensure that the thermal management solution can handle the specified junction-to-case thermal impedance and derating curves to maintain operation within the 150°C maximum junction temperature limit during high-current applications.

Selection Notes

Select this component when a dual anode common cathode Schottky diode is required for low-voltage, high-current applications. The TO-220FN-3 package is suitable for designs requiring robust through-hole mounting and effective heat dissipation via a heatsink. Consider the 110 V reverse voltage rating and 30 A average current capacity to ensure adequate headroom for your specific circuit loads and transient conditions.

Part Context

This part belongs to the ROHM RB225 series of Schottky barrier diodes. These devices are engineered for general-purpose electronic equipment, including audio-visual gear, office automation, and communication devices. They are not intended for radiation-tolerant environments or safety-critical systems such as medical instruments or aerospace machinery without explicit manufacturer consultation.

Replacement Considerations

Check for direct substitutes within the RB225 series or other ROHM TO-220FN-3 Schottky diodes with matching voltage and current ratings. Verify that any replacement maintains the same dual anode common cathode configuration and physical package dimensions to ensure compatibility with existing board layouts and thermal solutions.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

How is the internal structure configured?

The RB225T100 utilizes a dual anode common cathode configuration.

What is the thermal impedance from junction to case?

The thermal impedance from junction to case is 1.75°C/W.