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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 100V 30A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：870 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：8.2 ns
- Current - Reverse Leakage @ Vr：5 µA @ 100 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB228NS100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 30 A. The device exhibits a maximum forward voltage of 0.87 V at 15 A and a maximum reverse current of 5 mA at 100 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150°C.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Automotive-grade reliability compliant with AEC-Q101 standards
- Low reverse leakage current characteristics
- High thermal stability suitable for high-temperature environments
Applications
- Automotive power supply circuits
- Switching power supplies requiring high reliability
- DC-DC converter output rectification
Procurement Notes
Verify the specific suffix FHTL against the manufacturer's official datasheet to confirm packaging details and tape-and-reel specifications. Ensure the component meets AEC-Q101 automotive qualification requirements if intended for vehicle applications. Cross-reference the RoHS compliance status with the latest regulatory documentation provided by ROHM Semiconductor before integration into production designs.
Selection Notes
Select this component when a dual Schottky diode with a 100 V rating and 30 A continuous current capacity is required in a D2PAK package. Consider the low forward voltage drop for efficiency optimization in power conversion stages. Verify that the thermal management solution supports the specified maximum junction temperature of 150°C under expected load conditions.
Part Context
This part belongs to the RB228NS series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for high-reliability applications, particularly in automotive electronics and industrial power systems. The TO-263S package provides robust surface-mount capabilities with enhanced thermal dissipation compared to smaller packages.
Replacement Considerations
Direct substitutes include RB228NS-40FH, RB228NS-60FH, and RB228NS-30FH from the same manufacturer, which share identical packaging and configuration but differ in reverse voltage ratings. Verify electrical parameters match the specific application requirements before substitution.
