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The RB228T100 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 110 V and an average rectified forward current of 30 A. The device exhibits a maximum forward voltage of 860 mV at 5 A and a maximum reverse current of 400 uA at 100 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.
Verify the component status before procurement as it is marked as Not Recommended for New Designs (NRND). Confirm that existing inventory meets project requirements since new production may be limited. Check RoHS compliance details and ensure the TO-220FN-3 package fits the intended PCB layout. Validate that the 110 V rating aligns with system voltage spikes.
Select this component when a through-hole Schottky diode with common cathode configuration is required. Ensure the 30 A continuous current rating suffices for the load. Verify that the 110 V reverse voltage provides adequate margin for the application's peak inverse voltage. Consider the TO-220FN-3 package size for thermal management and mounting constraints.
This part belongs to ROHM's RB series of Schottky barrier diodes, known for low forward voltage and low reverse leakage current. The series targets applications requiring high efficiency and reliability in power conversion. The RB228T100 specifically utilizes silicon technology in a leaded package, distinguishing it from surface-mount variants like the RB228NS series.
Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is NRND, engineers should consult ROHM for recommended obsolescence alternatives or verify compatibility with similar TO-220FN-3 Schottky diodes from other manufacturers.