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The RB228T150HZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports a repetitive reverse voltage of 150 V and an average rectified forward current of 30 A. Key electrical parameters include a maximum forward voltage of 0.88 V at 15 A, a surge current rating of 100 A, and a maximum reverse current of 25 mA at 150 V. It operates up to a junction temperature of +150 °C and holds AEC-Q101 automotive qualification.
Verify the specific suffix HZC9 against the official ROHM datasheet to confirm pinout and packaging details. Ensure the procurement channel provides valid traceability documentation. Confirm that the component meets the required AEC-Q101 standards for your specific application environment. Check for any obsolescence notices as this series may be subject to production status changes.
Select this component when a robust, automotive-grade Schottky diode is required for high-current applications. The TO-220FN-3 package offers superior heat dissipation compared to smaller surface-mount options. Consider the 150 V reverse voltage rating to ensure adequate margin for system transients. Evaluate the forward voltage drop characteristics against efficiency requirements for the target power supply topology.
This part belongs to the RB228T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low reverse leakage current and high reliability. The RB228T150HZC9 specifically denotes the 150 V variant within this family, sharing the same physical footprint and general performance profile as other voltage ratings in the series.
Direct substitutes include RB228T150NZC9 and RB238T150NZC9. Verify compatibility regarding forward voltage specifications and thermal resistance values before substitution. Ensure the alternative part maintains the same AEC-Q101 qualification status if automotive use is intended.