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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 30V 40A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：40A
- Voltage - Forward (Vf) (Max) @ If：750 mV @ 20 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：12 µA @ 30 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RB238NS-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 30 V and an average forward rectified current of 40 A per diode. The device exhibits a low forward voltage of 750 mV at 20 A and a maximum reverse current of 12 µA at 30 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Super low reverse leakage current characteristics
- High reliability construction suitable for demanding environments
Applications
- Switching power supplies
- Automotive electronic systems
- DC-DC converters
Procurement Notes
Verify the specific suffix against official documentation, as variations such as FH indicate AEC-Q101 automotive qualification while standard TL may denote general industrial grade. Confirm RoHS compliance status and packaging options like cut tape or reel directly from the manufacturer's datasheet before procurement to ensure alignment with assembly requirements.
Selection Notes
Select this component for applications requiring high current handling in a compact surface-mount footprint. The 30 V rating suits low-voltage DC bus applications. Ensure thermal management strategies account for the 150 °C maximum junction temperature limit during operation to maintain device longevity and performance stability under load.
Part Context
This part belongs to the RB238NS series of Schottky barrier diodes designed for high-efficiency rectification. The series offers various voltage ratings including 30 V, 60 V, and 100 V variants. The TO-263S package provides robust thermal dissipation capabilities compared to smaller surface-mount packages, making it suitable for medium-to-high power applications.
Replacement Considerations
Cross-reference with RB238NS-30FH for automotive-grade equivalents. Verify pinout compatibility and electrical parameters against other 30 V, 40 A Schottky diodes in TO-263 packages from different manufacturers.
