SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB238NS100TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D²PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 40 A per diode. The device exhibits a maximum forward voltage of 0.86 V at 20 A and a maximum reverse current of 20 µA at 100 V. It supports a junction temperature up to +150°C and complies with the AEC-Q101 automotive qualification standard.
Verify the specific suffix 'TL' against the official datasheet to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact voltage and current ratings required for the target application. Cross-reference the manufacturing date code and RoHS compliance status with the supplier's certificate of conformity prior to final procurement decisions.
Select this component when a high-current, low-voltage drop solution is required in a compact surface-mount form factor. The TO-263S package provides robust thermal dissipation capabilities suitable for moderate power applications. Consider the AEC-Q101 certification if the design targets automotive environments requiring enhanced reliability and long-term stability under varying thermal conditions.
This device belongs to the RB238 series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for high-efficiency rectification in power electronics. The RB238NS100TL specifically denotes the 100V variant within the TO-263S package family, offering a balance between current handling capacity and physical footprint for modern electronic designs.
Direct replacements include RB238NS100FHTL and RB238NS100, which share identical electrical characteristics and pinout configurations. Verify that any substitute maintains the same AEC-Q101 qualification status and thermal performance metrics to ensure compatibility with existing board layouts and regulatory requirements.