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The RB238T-60HZC9 is a silicon epitaxial planar Schottky barrier diode qualified under the AEC-Q101 automotive standard. It features a cathode common dual configuration housed in a TO-220FN (3-pin) leaded package. The device supports a repetitive peak reverse voltage of 60V and an average rectified forward current of 40A per diode at a case temperature of 85°C. Key electrical characteristics include a maximum forward voltage of 0.86V at 20A, a maximum reverse current of 12µA at 60V, and a non-repetitive surge current rating of 100A. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix C9 against official documentation to confirm packaging details and manufacturing origin. Confirm that the component meets all required AEC-Q101 qualification standards for your specific application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance and derating curves provided in the datasheet.
Select this component when a dual Schottky diode with automotive qualification is required. The TO-220FN package is suitable for through-hole mounting applications requiring robust mechanical stability. Consider the 60V rating and 40A current capacity relative to your system's peak load and voltage spikes.
This part belongs to the RB238T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed to provide high reliability and low forward voltage drop for power conversion applications. The RB238T-60HZ variant specifically targets systems requiring 60V blocking capability with dual anode configurations.
Consult official ROHM documentation for verified substitute part numbers. Ensure any replacement maintains the same AEC-Q101 qualification, package dimensions, and electrical ratings.