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The RB238T100HZC9 is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 package. The device supports a repetitive reverse voltage of 150 V and an average rectified forward current of 40 A. Key electrical parameters include a maximum forward voltage of 870 mV at 20 A and a maximum reverse current of 30 µA at 150 V. It is qualified under the AEC-Q101 automotive standard and operates with a junction temperature up to +150 °C.
Verify the specific suffix C9 against the official datasheet to confirm packaging details, as suffixes often denote tube or bulk variations. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Cross-reference the manufacturer's latest documentation for any obsolescence notices or alternative recommendations, as this series may have updated variants.
Select this component when a through-hole Schottky diode with automotive qualification is required. The 150 V rating and 40 A current capacity suit medium-power applications. Consider the TO-220FN-3 package for heat dissipation needs. Compare forward voltage drop specifications against system efficiency targets. Verify that the common cathode topology aligns with the intended bridge or synchronous rectifier circuit architecture.
This part belongs to the RB238 series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and packages, including surface-mount and through-hole options. The RB238T100HZC9 specifically addresses the need for robust, automotive-grade rectification in power electronics, combining high current handling with low loss characteristics typical of silicon Schottky technology.
Check for direct substitutes within the RB238 series with matching voltage and current ratings. Verify pin compatibility and thermal performance before substituting. Consult the manufacturer's selection guide for updated parts if this specific suffix is discontinued.