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The RB238T150HZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports an average rectified forward current of 40 A and withstands a repetitive reverse voltage of 150 V. Key electrical characteristics include a maximum forward voltage of 870 mV at 20 A, a surge current rating of 100 A, and a low reverse leakage current of 30 µA at 150 V. It is qualified under the AEC-Q101 automotive standard and operates at junction temperatures up to +150°C.
Verify the specific suffix 'C9' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component meets the required AEC-Q101 qualification level for your specific application environment. Cross-reference the TO-220FN-3 package dimensions with your PCB footprint requirements before finalizing procurement decisions.
Select this component when a high-current, automotive-qualified Schottky diode is required in a through-hole format. The 150 V rating and 40 A current capacity make it suitable for medium-voltage DC bus applications. Consider the TO-220FN-3 package for effective heat dissipation without requiring additional external heatsinking in moderate load scenarios.
This part belongs to the RB238T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use in automotive and industrial power electronics where high reliability and low forward voltage drop are critical. The 'HZ' designation typically indicates specific internal processing or material optimizations within the product line.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative devices based on matching electrical parameters and package dimensions.