RB238T150NZC9

RB238T150NZC9

$3.06
  • Description:DIODE ARR SCHOT 150V 40A TO220FN
  • Series:-

SKU:897390789f2b Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARR SCHOT 150V 40A TO220FN
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:870 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:30 µA @ 150 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Grade:-
  • Qualification:-

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RB238T150NZC9

Overview

The RB238T150NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 150 V and an average forward current rating of 40 A. The device exhibits a typical forward voltage of 870 mV at 20 A and a low reverse leakage current of 30 µA at 150 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 qualification for automotive applications.

Feature Summary

  • Dual anode common cathode configuration for efficient rectification
  • AEC-Q101 qualified for automotive reliability standards
  • Super low reverse leakage current characteristics
  • High thermal stability with maximum junction temperature of 150 °C

Applications

  • Automotive power supply circuits
  • General purpose rectification in switching power supplies
  • Free-wheeling diodes in inductive load protection

Procurement Notes

Verify the specific suffix 'NZ' against the official ROHM datasheet to confirm exact electrical tolerances and marking codes, as suffixes often denote specific binning or packaging variations. Ensure the procurement channel provides traceability documentation required for AEC-Q101 components. Confirm that the TO-220FN-3 package dimensions match the mechanical constraints of the target assembly before finalizing orders.

Selection Notes

Select this component when a high-current, low-voltage Schottky solution is required for automotive or industrial environments. The common cathode arrangement simplifies circuit design for full-wave rectification or bridge configurations without using four discrete devices. Consider the TO-220FN-3 package for its robust thermal performance and ease of heatsinking compared to surface-mount alternatives in high-power applications.

Part Context

This part belongs to the RB238T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by high reliability and low forward voltage drop, making it suitable for high-efficiency power conversion. The RB238T150 variant specifically targets 150 V blocking voltage applications, distinguishing it from lower voltage counterparts like the RB238T60 or higher voltage versions within the same family.

Replacement Considerations

Direct substitutes include the RB238T150HZC9, which shares identical electrical specifications and package type but may differ in specific manufacturing lot markings. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' TO-220FN-3 Schottky diodes rated for 150 V and 40 A.

RB238T150NZC9RB238T150NZC9
$3.06
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