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The RB480SGTE61 is a Schottky barrier diode manufactured by ROHM Semiconductor. It features an ultra-small mold type UMD4 package and is constructed using silicon epitaxial planar technology. The device is designed for low current rectification applications, offering low reverse leakage current and high reliability. Key electrical ratings include a repetitive peak reverse voltage of 45V and a DC reverse voltage of 40V. The average rectified forward current rating is 100mA per diode, with a forward current surge peak capability of 1A at 60Hz for one cycle. The junction temperature limit is 125°C, and the storage temperature range spans from -40°C to +125°C.
Verify the specific ordering suffix TE61 against official ROHM documentation to confirm tape and reel packaging specifications. Ensure the component matches the UMD4 package dimensions and lead configurations required for your PCB layout. Cross-reference the absolute maximum ratings with your circuit's operational limits to prevent exceeding the 125°C junction temperature threshold during use.
Select this component when space-constrained designs require a Schottky barrier diode in an ultra-small form factor. The UMD4 package is suitable for automated surface-mount assembly processes. Consider the 100mA average forward current rating to ensure it meets the load requirements of the specific low-current rectification application without derating issues.
This part belongs to the RB480K series of Schottky barrier diodes produced by ROHM Semiconductor. The series utilizes silicon epitaxial planar structures to achieve high reliability and low leakage current. These diodes are engineered for compact electronic devices where minimal footprint and efficient low-current rectification are critical performance factors.
Consult official ROHM substitution guides for verified equivalents. Generic replacements must match the UMD4 package, 45V reverse voltage rating, and 100mA forward current capacity to maintain circuit integrity.