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The RB480Y-40GT2R is a dual Schottky barrier diode manufactured by ROHM Semiconductor, designed for small-signal rectification applications. It features a silicon construction housed in an SOT-543-4 surface-mount package. The device supports a maximum repetitive reverse voltage of 40 V and conducts an average forward current of 200 mA. Key electrical characteristics include a maximum forward voltage of 550 mV at the rated current and a low reverse leakage current of 10 µA. It withstands a forward surge current of 1 A and operates reliably within a junction temperature range up to +125 °C.
Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status via official documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to maintain package integrity during assembly processes.
Select this component when a dual-diode solution is required in space-constrained designs utilizing the SOT-543-4 footprint. Evaluate the 40 V reverse voltage rating against peak circuit transients to ensure adequate margin. Consider the 200 mA continuous current limit for load requirements and verify that the 550 mV forward voltage meets system efficiency targets.
This part belongs to the RB480Y series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered for high-reliability applications requiring fast switching speeds and low power loss. The specific model utilizes a silicon substrate optimized for stable performance across varying thermal environments typical in portable electronic devices.
Publicly confirmed substitute part numbers are not available in the provided reference data. Verify pin compatibility and electrical specifications with alternative manufacturers if sourcing this discontinued or limited-stock item.