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The RB717UMTL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a dual cathode common anode configuration housed in a compact SOT-323FL-3 (UMD3F) surface-mount package. The device utilizes silicon technology and supports a maximum operating temperature of +125°C. Key electrical parameters include a repetitive reverse voltage (Vrrm) of 45 V, a forward current (If) of 30 mA, and a low forward voltage (Vf) of 370 mV at 1 mA. The component exhibits a reverse current (Ir) of 1 µA and can withstand a forward surge current (Ifsm) of 200 mA.
Verify the specific ordering suffix to ensure the correct packaging format, such as cut tape or reel, matches the assembly requirements. Confirm that the 45 V rating aligns with the system's peak inverse voltage needs. Ensure the SOT-323FL-3 footprint is compatible with the PCB layout. Check for any RoHS compliance documentation if required by the manufacturing process.
Select this component when a low-capacitance, fast-recovery Schottky diode is needed in a minimal footprint. The dual cathode arrangement allows for use in bridge rectifiers or logic ORing functions within a single package. Consider the 30 mA continuous current limit and the 45 V reverse voltage rating to ensure adequate derating for the target application environment.
This part belongs to the RB717 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse leakage current, making it suitable for consumer electronics. The UMD3F package variant offers a small outline dimension compared to standard SOT-323 packages, facilitating higher density mounting on printed circuit boards.
The RB717UM is listed as an alias for this part number. Verify pinout compatibility and electrical specifications before substituting with other dual Schottky diodes in similar packages.