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The RB851YT2R is a Schottky barrier diode manufactured by Rohm Semiconductor, designed for high-efficiency detection and general rectification applications. It features a dual-line configuration within an EMD4 (SOT-543) surface-mount package. Key electrical specifications include a reverse voltage of 5V, a forward current of 10mA, and a low forward voltage of 0.29V at 1mA. The device exhibits a junction capacitance of 1.1pF at 1V reverse bias, supporting operation up to 125°C junction temperature.
Verify the specific ordering suffix 'T2R' to confirm tape-and-reel packaging quantities. Confirm RoHS compliance status as per the latest manufacturer documentation. Ensure the component meets the required operating temperature range for the target application environment before finalizing procurement.
Select this component when a dual-diode solution is required in a SOT-543 package. The low forward voltage and small capacitance make it suitable for sensitive RF detection tasks. Verify that the 5V reverse voltage rating aligns with the maximum circuit voltage peaks to prevent breakdown.
This part belongs to Rohm's line of Schottky barrier diodes, specifically engineered for detection purposes. The RB851 series utilizes advanced semiconductor processes to achieve low leakage and fast switching characteristics. It serves as a specialized alternative to standard rectifier diodes in high-frequency signal handling scenarios.
Check for direct pin-compatible substitutes within the same package family. Verify that any replacement maintains the 5V reverse voltage and 10mA forward current ratings. Ensure the alternative component offers comparable junction capacitance for high-frequency performance.