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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 100V 20A TO263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：20A
- Voltage - Forward (Vf) (Max) @ If：710 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：70 µA @ 100 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RBLQ20NL10CFHTL is a Schottky barrier diode with AEC-Q101 qualification, utilizing a trench MOS structure. It features a cathode common dual configuration in an LPDL (TO-263L) package. Key electrical ratings include a repetitive peak reverse voltage of 100 V and an average rectified forward current of 20 A per diode. The device supports a peak forward surge current of 150 A and operates up to a junction temperature of 150°C.
Feature Summary
- High reliability power mold type construction
- Cathode common dual type inner circuit
- Low forward voltage and low reverse current characteristics
- Low capacitance design
Applications
- Switching power supplies
- Freewheel diodes
- Reverse polarity protection
Procurement Notes
Verify the specific ordering suffix TL corresponds to the embossed tape packaging format before procurement. Confirm that the component meets AEC-Q101 automotive grade requirements for the intended application environment. Ensure thermal management designs account for the specified thermal resistance values to prevent exceeding maximum junction temperatures during operation.
Selection Notes
Select this component for applications requiring high efficiency and robust performance in automotive or industrial environments. The dual cathode common configuration allows for efficient use of board space while providing independent rectification paths. Consider the low forward voltage drop for improved system efficiency and the high surge current capability for handling transient loads effectively.
Part Context
This part belongs to ROHM's lineup of highly efficient Schottky barrier diodes designed for automotive data sheet standards. It integrates a trench MOS structure to optimize the trade-off between low forward voltage and low reverse leakage current. The device is engineered for stable operation at high temperatures, making it suitable for demanding power electronics applications.
Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and thermal characteristics against the original specifications.
FAQ
What is the internal circuit configuration of the RBLQ20NL10CFHTL?
The device features a cathode common dual type inner circuit.
Is the RBLQ20NL10CFHTL qualified for automotive applications?
Yes, the component is AEC-Q101 qualified.
What structure is used in the RBLQ20NL10CFHTL?
The device utilizes a trench MOS structure.
