ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：HV-IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RBN75H125S1FP4-A0 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage rating of 1250 V and a continuous collector current capacity of 75 A. The device belongs to the RBN75H series, designed for robust power switching applications. It utilizes an FP4 package configuration to facilitate efficient thermal management and mechanical mounting in industrial power modules.
Feature Summary
- High voltage blocking capability suitable for demanding power conversion environments
- Integrated thermal design optimized for module-level heat dissipation
- Automotive-grade qualification ensuring reliability under harsh operating conditions
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply systems
- High-power renewable energy converters
Procurement Notes
Verify the specific suffix -A0 against the official Renesas datasheet to confirm exact manufacturing lot specifications and regional compliance certifications. Ensure the component matches the required pinout and thermal interface dimensions for your target PCB or module assembly before finalizing orders.
Selection Notes
Select this IGBT when system requirements demand 1250 V blocking voltage with 75 A continuous current handling. Evaluate the thermal resistance characteristics of the FP4 package to ensure adequate heatsinking. Confirm that the gate drive circuitry aligns with the device's switching speed and threshold voltage specifications for optimal efficiency.
Part Context
This component is part of Renesas' advanced IGBT portfolio, targeting high-efficiency power electronics. It complements other devices in the RBN series, offering a balance of low conduction losses and fast switching performance. The product supports modern industrial standards for power density and reliability.
Replacement Considerations
Direct substitutes include the RBN75H65T1FPQ-A0 for lower voltage applications. For equivalent 1250 V ratings, consider the RJP1CS05DWT or RJP1CS08DWT from the same manufacturer, verifying pin compatibility and thermal performance metrics.
