RBN75H65T1FPQ-A0#CB0

RBN75H65T1FPQ-A0#CB0

$6.61
  • Description:IGBT TRENCH 650V 150A TO-247A
  • Series:-

SKU:87ee5cb4c428 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 650V 150A TO-247A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):150 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
  • Power - Max:312 W
  • Switching Energy:1.6mJ (on), 1mJ (off)
  • Input Type:Standard
  • Gate Charge:54 nC
  • Td (on/off) @ 25°C:29ns/113ns
  • Test Condition:400V, 75A, 16Ohm, 15V
  • Reverse Recovery Time (trr):72 ns
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247A
  • Grade:-
  • Qualification:-

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RBN75H65T1FPQ-A0#CB0

Overview

The RBN75H65T1FPQ-A0#CB0 is a Field Stop Trench IGBT module manufactured by Renesas Electronics Corporation. It features a rated collector-emitter voltage of 650V and a continuous collector current of 75A at 25°C. The device utilizes a press-fit mounting method within a compact package designed for high-power density applications. Key electrical characteristics include a typical saturation voltage of approximately 1.8V at rated conditions, ensuring efficient conduction. The module integrates an anti-parallel diode with specific recovery properties suitable for inverter topologies.

Feature Summary

  • Field Stop Trench technology for optimized switching performance
  • Press-fit termination for reliable thermal and mechanical connection
  • Integrated anti-parallel diode for inverter bridge configurations

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the suffix #CB0 against official Renesas documentation to confirm specific binning or packaging variations. Ensure compatibility with existing press-fit tooling and thermal interface materials. Cross-reference the datasheet revision date to validate parameter consistency before integration into production designs.

Selection Notes

Select this component for applications requiring 650V blocking capability and 75A continuous current handling. Evaluate thermal resistance values from the datasheet to design appropriate heatsinking. Confirm that the switching frequency requirements align with the device's turn-on and turn-off time specifications to manage power losses effectively.

Part Context

This part belongs to the RBN series of press-fit IGBT modules from Renesas. It is engineered for high-efficiency power conversion where low on-state voltage and robust short-circuit withstand capability are critical. The series targets industrial and consumer power electronics markets demanding compact form factors.

Replacement Considerations

Direct pin-compatible replacements may include other 650V 75A Field Stop Trench IGBTs in similar press-fit packages. Verify electrical parameters such as Vce(sat) and switching times closely. Mechanical dimensions and terminal force requirements must match exactly for direct substitution.

RBN75H65T1FPQ-A0#CB0RBN75H65T1FPQ-A0#CB0
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