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The RBQ10B45ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a power mold type (CPD) construction with low reverse leakage current and high reliability. The device utilizes a silicon epitaxial planer structure and is housed in a TO-252AA (D-PAK/SC-63) surface-mount package. Key electrical parameters include a repetitive peak reverse voltage of 45 V, an average rectified forward current of 10 A per diode, and a maximum forward voltage of 0.65 V at 5 A. The component supports a peak surge forward current of 50 A and operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix 'TL' against the manufacturer's latest documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as indicated in the datasheet. Ensure that the component designation aligns with the official ROHM part number list, noting any potential revisions or obsolescence markers present in the source material.
Select this component for applications requiring a single Schottky diode in a surface-mount configuration. Consider the thermal derating curves when designing for ambient temperatures exceeding standard conditions. Verify that the 45 V reverse voltage rating provides sufficient margin for the target circuit's peak inverse voltage requirements.
This component belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of silicon epitaxial planer technology and offers various current and voltage ratings across different package types. The RBQ10B45A specifically targets general-purpose rectification needs with a focus on low leakage and robust packaging.
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Ensure any replacement matches the TO-252AA footprint and maintains equivalent electrical ratings for voltage and current handling.