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The RBQ10BM100AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average forward rectified current of 10 A. The device exhibits a maximum forward voltage of 0.69 V at 10 A and a maximum reverse current of 0.2 mA at 100 V. It supports a forward surge current of 100 A and operates within a junction temperature range up to +150 °C. This component is qualified under the AEC-Q101 standard for automotive applications.
Verify that the ordering suffix matches the required packaging format, as variations exist between reel, cut tape, and MouseReel options. Confirm the specific part number includes the 'HTL' designation to ensure correct taping specifications. Cross-reference the manufacturer datasheet for the latest revision status and environmental compliance details before finalizing procurement orders.
Select this component when a dual common cathode Schottky diode is required for 100 V applications with 10 A continuous current capacity. Ensure the thermal management design accommodates the TO-252-3 package limitations. Verify that the AEC-Q101 qualification meets the specific automotive grade requirements of the target system design.
This part belongs to ROHM's RBQ series of Schottky barrier diodes designed for automotive use. The series offers various voltage and current ratings within the same TO-252 form factor. The RBQ10BM100AFHTL specifically addresses mid-range power requirements where low loss and high reliability are critical for vehicle electronics.
Direct substitutes include other ROHM parts from the RBQ series with matching electrical parameters, such as the RBQ20BM100AFH for higher current or RBQ10BM45AFHTL for lower voltage applications. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers.