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The RBQ10NS100AFHTL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-efficiency and high-reliability applications. It features a dual anode common cathode configuration within a TO-263S (D2PAK) surface-mount package. The device supports an average rectified forward current of 10 A and a repetitive reverse voltage of 100 V. Key electrical parameters include a maximum forward voltage of 770 mV at 5 A and a low reverse current of 200 uA at 100 V. It is qualified under the AEC-Q101 standard for automotive use and operates at junction temperatures up to +150°C.
Verify the exact part number against official ROHM documentation, as the provided knowledge base lists RBQ10NS45AFHTL and RBQ30NS100AFHTL but not RBQ10NS100AFHTL. Confirm that the 100V rating aligns with your specific circuit requirements, as similar models like RBQ10NS45AFHTL exist with different voltage ratings. Ensure the TO-263S package footprint matches your PCB design constraints before finalizing procurement.
Select this component when a dual Schottky diode with a 100V rating and 10A current capacity is required for automotive or industrial applications. Compare it with the RBQ30NS100AFHTL if higher current handling is needed, or the RBQ10NS45AFHTL if lower voltage operation suffices. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability and long-term stability under varying thermal conditions.
This component belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor, which are specifically engineered for high-efficiency rectification. The series utilizes silicon technology and offers various voltage and current combinations to suit diverse power management needs. The TO-263S package provides robust thermal performance and ease of surface mounting for automated assembly processes.