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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 65V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：65 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：690 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：70 µA @ 65 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RBQ10NS65AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 65 V and an average rectified forward current of 10 A. The device exhibits a typical forward voltage of 630 mV at 5 A and a low reverse leakage current of 5 uA. It supports a forward surge current of 50 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 qualification for automotive reliability.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Low reverse leakage current characteristics
- High thermal stability with elevated maximum operating temperature
- Automotive-grade reliability certification
Applications
- General rectification in automotive electronic systems
- Freewheeling diodes in DC-DC converter circuits
- Power supply units requiring high efficiency
- Protection circuits in portable electronic devices
Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging and automotive qualification status. Confirm that the TO-263S footprint matches the target PCB layout. Check RoHS compliance documentation for specific regional regulatory requirements. Ensure storage conditions remain within specified limits to maintain device integrity prior to assembly.
Selection Notes
Select this component when a 65 V rating and 10 A continuous current capacity are required in a compact surface-mount form factor. The dual anode structure allows for flexible circuit topologies compared to single diodes. Consider the thermal performance and package size relative to heat dissipation needs. Verify compatibility with existing AEC-Q101 qualified designs if used in automotive applications.
Part Context
This device belongs to ROHM's RBQ series of high-efficiency Schottky barrier diodes designed for general rectification and freewheeling applications. The series emphasizes low forward voltage and low reverse current to improve overall system efficiency. The TO-263S package provides robust thermal performance suitable for power electronics. The AFHTL suffix indicates specific packaging and automotive grade attributes.
Replacement Considerations
Direct substitutes include RBQ10NS65AFH and RBQ10NS65ATL, which share identical electrical specifications and pinout configurations. Ensure any replacement maintains the same AEC-Q101 qualification if automotive use is intended. Verify that alternative packages match the physical dimensions and thermal characteristics of the original TO-263S design.
