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The RBQ15BM65ATL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (DPAK) surface-mount package. The device supports a repetitive peak reverse voltage of 65V and an average rectified forward current of 15A per diode. Key electrical characteristics include a maximum forward voltage of 0.63V at 7.5A and a low reverse current of up to 140μA at 65V. It withstands a peak forward surge current of 100A and operates with a maximum junction temperature of 150°C.
Verify the specific ordering suffix TL against official documentation to confirm packaging details, as variations exist within the product family. Ensure that the selected component matches the required thermal resistance and mounting specifications for the target application board. Cross-reference the latest datasheet revision to confirm compliance with RoHS standards and availability status before finalizing procurement plans.
Select this component for applications requiring a dual Schottky configuration in a compact surface-mount footprint. Consider the thermal resistance values when designing heat dissipation paths on the PCB. Evaluate the forward voltage drop and reverse leakage current requirements to ensure compatibility with system efficiency targets and operating temperature ranges.
This part belongs to the RBQ series of high-efficiency Schottky barrier diodes from ROHM Semiconductor. The series is designed to balance low forward voltage and low reverse current characteristics. The RBQ15BM65ATL specifically utilizes the TO-252 package format, distinguishing it from other series members that may use different housing styles or current ratings.
RBQ15BGE65ATL is documented as having the same pinout and package.